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| SHINDENGEN Switching Power Transistor 2SC5382 6A NPN OUTLINE DIMENSIONS Case : FTO-220 Unit : mm RATINGS *oeAbsolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55*150*Z Junction Temperature Tj 150 *Z Collector to Base Voltage V 1200 V CBO Collector to Emitter VoltageV 550 V CEO Emitter to Base Voltage V 9 V EBO Collector Current DC IC 6 A Collector Current Peak ICP 12 Base Current DC IB 3 A Base Current Peak IBP 6 Total Transistor Dissipation P 40 W T Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV Mounting Torque TOR (Recommended torque) 0.5(0.3) Nm *oeElectrical Characteristics (Tc=25*Z) Conditions Item Symbol Collector to Emitter Sustaining Voltage 0.1A V (sus) IC= CEO Collector Cutoff Current ICBO V = 1200V CB ICEO V = 550V CE Emitter Cutoff Current IEBO V = 9V EB DC Current Gain h V = 5V,= 3A CE C I FE h CE C I FEL V = 5V,= 1mA Collector to Emitter Saturation Voltage3A V (sat) IC= CE Base to Emitter Saturation Voltage IB= 0.6A V (sat) BE Thermal Resistance AEjc Junction to case Turn on Time ton IC= 3A Storage Time ts IB1 0.6A,=I1.2A = B2 Fall Time tf R = 50, V 4V = L BB2 Ratings Unit Min 550 V Max 0.1 mA Max 0.1 Max 0.1 mA Min 10 Min 10 Max 1.0 V Max 1.5 V Max 3.13 Z/W * Max 1.3 Max 4.0 Es Max 0.3 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd 2SC5382 hFE - I C VCE = 5V 100 Tc = 150C 100C 50C 25C 0C -25C -55C DC Current Gain hFE 10 1 0.001 0.01 0.1 1 10 12 Collector Current IC [A] 2SC5382 Saturation Voltage 3 1.5A 3A 6A 9A 2.5 3 IC = 0.5A 2.5 2 2 1.5 1.5 Collector-Emitter Voltage VCE [V] 0.5 0.5 Tc = 25C 0 0.1 1 6 0 0.01 Base Current IB [A] Base-Emitter Voltage VBE [V] 1 1 2SC5382 10 Switching Time - IC ts 1 Switching Time tSW [s] ton tf 0.1 IB1 = 0.2IC IB2 = 0.4IC VBB2 = 4V VCC = 150V Tc = 25C 0.01 0 1 2 3 4 5 6 Collector Current IC [A] 2SC5382 10 Switching Time - VCC ts ton 1 Switching Time tSW [s] tf 0.1 IC = 3A IB1 = 0.6A IB2 = 1.2A VBB2 = 4V Tc = 25C 0.01 0 50 100 150 200 250 300 Collector Voltage VCC [V] 2SC5382 10 Switching Time - Tc ts ton 1 Switching Time tSW [s] tf 0.1 IC = 3A IB1 = 0.6A IB2 = 1.2A VBB2 = 4V R L = 50 0.01 0 50 100 150 Case Temperature Tc [C] 2SC5382 12 10 10ms 1ms Forward Bias SOA 200s 100s DC PT limit Collector Current IC [A] 1 IS/B limit 0.1 Tc = 25C Single Pulse 0.01 1 10 100 550 Collector-Emitter Voltage VCE [V] 2SC5382 100 Collector Current Derating Collector Current Derating [%] 80 IS/B limit 60 40 PT limit 20 VCE = fixed 0 0 50 100 150 Case Temperature Tc [C] 2SC5382 12 Reverse Bias SOA 10 8 Collector Current IC [A] 6 4 2 IB1 = 0.3IC IB2 = 1.8A VBB2 = 5V Tc < 150C 0 100 200 300 400 500 600 700 800 0 Collector-Emitter Voltage VCE [V] 2SC5382 Transient Thermal Impedance 10 1 0.1 Transient Thermal Impedance jc(t) [C/W] 0.01 0.001 10-3 10-2 10-4 10-1 100 101 102 Time t [s] |
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